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FDMC8200S - MOSFET

Datasheet Summary

Description

This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Features

  • Q1: N-Channel.
  • Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A.
  • Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel.
  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A.
  • Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A.
  • RoHS Compliant General.

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Datasheet Details

Part number FDMC8200S
Manufacturer Fairchild Semiconductor
File Size 443.09 KB
Description MOSFET
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FDMC8200S Dual N-Channel PowerTrench® MOSFET March 2011 FDMC8200S Dual N-Channel PowerTrench® MOSFET 30 V, 10 mΩ, 20 mΩ Features Q1: N-Channel „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A „ Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
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