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FDMC8462 - N-Channel Power Trench MOSFET

Description

Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A Low Profile - 1mm max in Power 33 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® pro

Features

  • General.

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FDMC8462 N-Channel Power Trench® MOSFET March 2008 FDMC8462 N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ tm Features General Description „ Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A „ Low Profile - 1mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
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