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FDMC8462 - N-Channel MOSFET

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Features

  • Max rDS(on) = 5.8 mW at VGS = 10 V, ID = 13.5 A Max rDS(on) = 8.0 mW at VGS = 4.5 V, ID = 11.8 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet preview – FDMC8462

Datasheet Details

Part number FDMC8462
Manufacturer ON Semiconductor
File Size 486.65 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8462 Datasheet
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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 40 V, 20 A, 5.8 mW FDMC8462 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 5.8 mW at VGS = 10 V, ID = 13.5 A Max rDS(on) = 8.0 mW at VGS = 4.5 V, ID = 11.
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