Datasheet Details
| Part number | FDMC8462 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 262.58 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet | FDMC8462-FairchildSemiconductor.pdf |
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Overview: FDMC8462 N-Channel Power Trench® MOSFET March 2008 FDMC8462 N-Channel Power Trench® MOSFET 40V, 20A, 5.
| Part number | FDMC8462 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 262.58 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet | FDMC8462-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A Low Profile - 1mm max in Power 33 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application DC - DC Conversion S Pin 1 S S G D5 D6 4G 3S D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 1a) (Note 3) (Note 1a) 2S 1S Ratings 40 ±20 20 64 14 50 216 41 2.0 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 3 53 °C/W Device Marking FDMC8462 Device FDMC8462 Package Power 33 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2008 Fairchild Semiconductor Corporation FDMC8462 Rev.C 1 www.fairchildsemi.com FDMC8462 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VGS = 0V, VDS = 32V, VGS = ±20V, VDS = 0V On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDMC8462 | N-Channel MOSFET | ON Semiconductor |
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