FDMC8462 Description
Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A Low Profile - 1mm max in Power 33 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMC8462 Key Features
- Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A
- Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A
- Low Profile
- 1mm max in Power 33
- 100% UIL Tested
- RoHS pliant
- DC Conversion
- 55 to +150