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FDMC86012 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This device has been designed specifically to improve the efficiency of DC/DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits.

Overview

FDMC86012 N-Channel Power Trench® MOSFET October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.

Key Features

  • Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A.
  • Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free.
  • 100% UIL Tested.
  • RoHS Compliant General.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDMC86012 N-Channel MOSFET ON Semiconductor

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