Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
30 V, 88 A, 2.7 mW
General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various ponents of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic- level device.
Features
- Max RDS(on) = 2.7 mW at VGS = 4.5 V, ID = 23 A
- Max RDS(on) = 4.7 mW at VGS = 2.5 V, ID = 17.5 A
- High Performance Technology for Extremely low RDS(on)
-...
