FDMC86012 - N-Channel MOSFET

onsemi

General Description

of DC/DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Key Features

Max RDS(on) = 2.7 mW at VGS = 4.5 V, ID = 23 A.
Max RDS(on) = 4.7 mW at VGS = 2.5 V, ID = 17.5 A.
High Performance Technology for Extremely low RDS(on).
Termination is Lead.
free.
100% UIL Tested.
Pb.
Free, Halide Free and RoHS Compliant.

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FDMC86012 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC86012
Manufacturer	onsemi
File Size	541.13 KB
Description	N-Channel MOSFET
Datasheet	FDMC86012 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 30 V, 88 A, 2.7 mW FDMC86012 General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic−level device. Features • Max RDS(on) = 2.7 mW at VGS = 4.5 V, ID = 23 A • Max RDS(on) = 4.7 mW at VGS = 2.5 V, ID = 17.5 A • High Performance Technology for Extremely low RDS(on) • Termination is Lead−free • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant Applications • 3.