Datasheet Summary
FDMC86012 N-Channel Power Trench® MOSFET
October 2012
N-Channel Power Trench® MOSFET
30 V, 88 A, 2.7 mΩ
Features
- Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A
- Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
- 100% UIL Tested
- RoHS pliant
General Description
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various ponents of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive...
