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FDMC86012 - MOSFET

General Description

This device has been designed specifically to improve the efficiency of DC/DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Key Features

  • Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A.
  • Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC86012 N-Channel Power Trench® MOSFET October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.7 mΩ Features „ Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A „ Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ 100% UIL Tested „ RoHS Compliant General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits.