Datasheet Details
| Part number | FDMC86139P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 340.20 KB |
| Description | MOSFET |
| Download | FDMC86139P Download (PDF) |
|
|
| Part number | FDMC86139P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 340.20 KB |
| Description | MOSFET |
| Download | FDMC86139P Download (PDF) |
|
|
|
Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.
This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
This product is optimised for fast switching applications as well as load switch applications 100% UIL Tested RoHS Compliant Applications Active Clamp Switch Load Switch Top Bottom Pin 1 SS S G S S D D D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -
FDMC86139P P-Channel PowerTrench® MOSFET FDMC86139P P-Channel PowerTrench® MOSFET -100 V, -15 A, 67 mΩ June.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC86139P | P-Channel MOSFET | ON Semiconductor |
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