FDMC86139P mosfet equivalent, mosfet.
General Description
* Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
* Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
* Very low RDS-on mid voltage P chann.
as well as load switch applications
* 100% UIL Tested
* RoHS Compliant
Applications
* Active Clamp Switch <.
* Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
* Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
* Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild Semicon.
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