FDMC86139P Key Features
- Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
- Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
- Very low RDS-on mid voltage P channel silicon technology
- This product is optimised for fast switching
| Manufacturer | Part Number | Description |
|---|---|---|
| FDMC86139P | P-Channel MOSFET |