Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-100 V, -15 A, 67 mW
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH technology. This very high density process is especially tailored to minimize on- state resistance and optimized for superior switching performance.
Features
- Max rDS(on) = 67 mW at VGS =
- 10 V, ID =
- 4.4 A
- Max rDS(on) = 89 mW at VGS =
- 6 V, ID =
- 3.6 A
- Very Low RDS- On Mid Voltage P Channel Silicon Technology
Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications as well as
Load Switch Applications
- 100% UIL Tested
- These Devices are Pb- Free and are RoHS pliant
Applications
- Active Clamp Switch
- Load...
