FDMC86139P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
FDMC86139P Key Features
- Max rDS(on) = 67 mW at VGS = -10 V, ID = -4.4 A
- Max rDS(on) = 89 mW at VGS = -6 V, ID = -3.6 A
- Very Low RDS-On Mid Voltage P Channel Silicon Technology
- This Product is Optimised for Fast Switching