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FDMC86139P - P-Channel MOSFET

General Description

This P

POWERTRENCH technology.

state resistance and optimized for superior switching performance.

Key Features

  • Max rDS(on) = 67 mW at VGS =.
  • 10 V, ID =.
  • 4.4 A.
  • Max rDS(on) = 89 mW at VGS =.
  • 6 V, ID =.
  • 3.6 A.
  • Very Low RDS.
  • On Mid Voltage P Channel Silicon Technology Optimised for Low Qg.
  • This Product is Optimised for Fast Switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) -100 V, -15 A, 67 mW FDMC86139P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max rDS(on) = 67 mW at VGS = −10 V, ID = −4.4 A • Max rDS(on) = 89 mW at VGS = −6 V, ID = −3.6 A • Very Low RDS−On Mid Voltage P Channel Silicon Technology Optimised for Low Qg • This Product is Optimised for Fast Switching Applications as well as Load Switch Applications • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Active Clamp Switch • Load Switch DATA SHEET www.onsemi.com Pin 1 S S SG DDD D Top Bottom WDFN8 3.3x3.3, 0.