FDMC86139P Description
Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. ...
FDMC86139P Key Features
- Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
- Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
- Very low RDS-on mid voltage P channel silicon technology
- This product is optimised for fast switching