Datasheet Summary
FDMC86139P P-Channel PowerTrench® MOSFET
P-Channel PowerTrench® MOSFET
-100 V, -15 A, 67 mΩ
June 2014
Features
General Description
- Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
- Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
- Very low RDS-on mid voltage P channel silicon technology optimised for low Qg
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
- This product is optimised for fast switching applications as well as load switch applications
- 100% UIL Tested
- RoHS...
