FDMC8622 Datasheet - Fairchild Semiconductor

N-Channel Power Trench MOSFET

FDMC8622 Features

* Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A

* Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

* 100% UIL Tested

FDMC8622 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application * DC-DC Primary Switch D D D D D D D G 5 6 7 8 4 3 2 1 G S S S D S S S MLP 3.3X3.3 MOSFET Maxi.

FDMC8622 Datasheet (359.83 KB)

FDMC8622 Datasheet Preview — Preview of FDMC8622 PDF

Datasheet Details

Part number:

FDMC8622

Manufacturer:

Fairchild Semiconductor

File Size:

359.83 KB

Description:

N-channel power trench mosfet.

📁 Related Datasheet

FDMC8622 N-Channel MOSFET (ON Semiconductor)

FDMC86240 N-Channel MOSFET (Fairchild Semiconductor)

FDMC86244 N-Channel Power Trench MOSFET (Fairchild Semiconductor)

FDMC86244 N-Channel MOSFET (ON Semiconductor)

FDMC86244-L701 N-Channel MOSFET (ON Semiconductor)

FDMC86248 N-Channel Power Trench MOSFET (Fairchild Semiconductor)

FDMC86248 N-Channel MOSFET (ON Semiconductor)

FDMC86259P MOSFET (Fairchild Semiconductor)

FDMC86259P P-Channel MOSFET (ON Semiconductor)

FDMC86260 N-Channel MOSFET (ON Semiconductor)

TAGS

FDMC8622 N-Channel Power Trench MOSFET Fairchild Semiconductor

Image Gallery

FDMC8622 Features

FDMC8622 General Description

Datasheet Details

File Size:

Description:

FDMC8622 Distributor