FDMC8622 - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDMC8622
Manufacturer	ON Semiconductor
File Size	373.99 KB
Description	N-Channel MOSFET
Datasheet	FDMC8622 Datasheet
Additional preview pages of the FDMC8622 datasheet.

This N

POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Shielded Gate MOSFET Technology.
Max rDS(on) = 56 mW at VGS = 10 V, ID = 4 A.
Max rDS(on) = 90 mW at VGS = 6 V, ID = 3 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
100% UIL Tested.
This Device is Pb.
Free and is ROHS Compliant DATA SHEET www. onsemi. com VDS 100 V rDS(on) MAX 56 mW @ 10 V 90 mW @ 6 V ID MAX 16 A 8765 SSS.

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Published: Dec 19, 2023 |