FDMC8622 Datasheet N-Channel MOSFET

Manufacturer: onsemi

Datasheet Details

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 16 A, 56.

Shielded Gate MOSFET Technology.
Max rDS(on) = 56 mW at VGS = 10 V, ID = 4 A.
Max rDS(on) = 90 mW at VGS = 6 V, ID = 3 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
100% UIL Tested.
This Device is Pb.
Free and is ROHS Compliant DATA SHEET www. onsemi. com VDS 100 V rDS(on) MAX 56 mW @ 10 V 90 mW @ 6 V ID MAX 16 A 8765 SSS.

Brand Logo	Part Number	Description	Manufacturer
	FDMC8622	N-Channel Power Trench MOSFET	Fairchild Semiconductor