Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
DC-DC Primary Switch
D D
D
D
D D D
G
5 6 7 8
4 3 2 1
G S S S
D
S
S
S
MLP 3.3X3.3
MOSFET Maxi
Features
- Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A.
- Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A.
- High performance trench technology for extremely low rDS(on).
- High power and current handling capability in a widely used surface mount package.
- 100% UIL Tested.
- Termination is Lead-free and RoHS Compliant
General.
FDMC8622 Datasheet
