FDMC8622 Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 5...
FDMC8622 Key Features
- Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A
- Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- Termination is Lead-free and RoHS pliant
- DC-DC Primary Switch
