FDMC8622 Datasheet | Fairchild Semiconductor

FDMC8622 N-Channel Power Trench® MOSFET September 2012 N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m: Features - Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A - Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A - High performance trench technology for extremely low rDS(on) - High power and current handling capability in a widely used surface mount package - 100% UIL Tested - Termination is Lead-free and RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application - DC-DC Primary Switch 5 6 7 8 4 3 2...