FDMC86248 Key Features
- Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
- Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- 100% UIL Tested
- RoHS pliant
- Part: FDMC86248
- Description: N-Channel Power Trench MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 266.40 KB
Other FDMC86248 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDMC86248 | N-Channel MOSFET |