FDMC86248 Description
This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMC86248 Key Features
- Max RDS(on) = 90 mW at VGS = 10 V, ID = 3.4 A
- Max RDS(on) = 125 mW at VGS = 6 V, ID = 2.9 A
- Advanced Package and Silicon bination for Low RDS(on)
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS pliant