FDMC86248
FDMC86248 is manufactured by Fairchild Semiconductor.
FDMC86248 N-Channel Power Trench® MOSFET
September 2012
N-Channel Power Trench® MOSFET
150 V, 13 A, 90 mΩ
Features
- Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
- Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- 100% UIL Tested
- RoHS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
- Primary MOSFET
- MV synchronous rectifier
Top
Bottom S Pin 1 S S S G S S D D D G D D D D
Power...
