FDMC86340 Datasheet - Fairchild Semiconductor

MOSFET

FDMC86340 General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A * Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A * High performance technology for extremely low rDS(on) * Termination is Lead-free * RoHS Compliant This N-Channel MOSFET.

FDMC86340 Datasheet (189.59 KB)

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FDMC86340

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Fairchild Semiconductor

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189.59 KB

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Mosfet.
FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET January 2014 FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 48 A, 6.5 mΩ Feat.

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FDMC86340 MOSFET Fairchild Semiconductor

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FDMC86340 General Description

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