FDMC86340 Overview
This N−Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMC86340 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A
- Max RDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A
- High Performance Technology for Extremely Low RDS(on)
- Termination is Lead-Free
- RoHS pliant
