Datasheet Summary
FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET
January 2014
N-Channel Shielded Gate Power Trench® MOSFET
80 V, 48 A, 6.5 mΩ
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A
- Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
- DC-DC Conversion
Pin 1
Pin...
