Datasheet Details
| Part number | FDMC86520L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 289.54 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMC86520L Download (PDF) |
|
|
Overview: FDMC86520L N-Channel PowerTrench® MOSFET August 2011 FDMC86520L N-Channel Power Trench® MOSFET 60 V, 22 A, 7.
| Part number | FDMC86520L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 289.54 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMC86520L Download (PDF) |
|
|
|
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant Applications Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch Top Pin 1 S S S G Bottom D D D D D D D 8 1 S 5 6 7 4 3 2 G S S D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 60 ±20 22 55 13.5 60 79 40 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.1 53 °C/W Package Marking and Ordering Information Device Marking FDMC86520L Device FDMC86520L Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation FDMC86520L Rev.C 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ FDMC86520L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC86520L | N-Channel MOSFET | ON Semiconductor |
|
FDMC86520DC | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDMC86520DC | N-Channel Power Trench MOSFET |
| FDMC8651 | N-Channel Power Trench MOSFET |
| FDMC86570L | MOSFET |
| FDMC86570LET60 | MOSFET |
| FDMC86012 | MOSFET |
| FDMC86102 | N-Channel Power Trench MOSFET |
| FDMC86102L | MOSFET |
| FDMC86102LZ | N-Channel Power Trench MOSFET |
| FDMC86106LZ | N-Channel Power Trench MOSFET |
| FDMC86116LZ | MOSFET |