FDMC86520L Overview
This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMC86520L Key Features
- Max rDS(on) = 7.9 mW at VGS = 10 V, ID = 13.5 A
- Max rDS(on) = 11.7 mW at VGS = 4.5 V, ID = 11.5 A
- Low Profile
- 1 mm Max in Power 33
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and RoHS pliant
FDMC86520L Applications
- Primary Switch in Isolated DC−DC
