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FDMC86520L N-Channel PowerTrench® MOSFET
August 2011
FDMC86520L
N-Channel Power Trench® MOSFET
60 V, 22 A, 7.9 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.