FDMC86520L Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMC86520L Key Features
- Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
- Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- RoHS pliant
