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FDMC86520DC - N-Channel Power Trench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Key Features

  • Dual Cool TM General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET 60 V, 40 A, 6.3 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Top Side Cooling PQFN package „ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A „ Max rDS(on) = 8.7 mΩ at VGS = 8 V, ID = 14.