Datasheet Details
| Part number | FDMD86100 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 214.27 KB |
| Description | MOSFET |
| Download | FDMD86100 Download (PDF) |
|
|
| Part number | FDMD86100 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 214.27 KB |
| Description | MOSFET |
| Download | FDMD86100 Download (PDF) |
|
|
|
Common source configuration to eliminate PCB routing Large source pad on bottom of package for enhanced thermals Shielded Gate MOSFET Technology Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A Ideal for flexible layout in secondary side synchronous rectification Termination is Lead-free and RoHS Compliant 100% UIL tested This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology.
This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.
Provides a very small footprint (5 x 6 mm) for higher power density.
FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET February 2015 FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 39 A, 10.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMD86100 | Dual N-Channel MOSFET | ON Semiconductor |
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