FDMD86100 Datasheet - Fairchild Semiconductor

MOSFET

FDMD86100 General Description

* Common source configuration to eliminate PCB routing * Large source pad on bottom of package for enhanced thermals * Shielded Gate MOSFET Technology * Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A * Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A * .

FDMD86100 Datasheet (214.27 KB)

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FDMD86100

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Fairchild Semiconductor

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214.27 KB

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Mosfet.
FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET February 2015 FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 39 A, 10..

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FDMD86100 General Description

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