FDMD86100 Overview
This package integrates two N−Channel devices connected internally in mon−source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the mon source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
FDMD86100 Key Features
- mon Source Configuration to Eliminate PCB Routing
- Large Source Pad on Bottom of Package for Enhanced Thermals
- Shielded Gate MOSFET Technology
- Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A
- Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A
- Ideal for Flexible Layout in Secondary Side Synchronous Rectification
- 100% UIL tested
- This Device is Pb-Free, Halide Free and is RoHS pliant
