* Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
* Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
* Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
* Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
* Low profile: 0.55 mm maximum in the new package Mi
FDME1023PZT Datasheet (356.26 KB)
FDME1023PZT
Fairchild Semiconductor
356.26 KB
Dual p-channel powertrench mosfet.
www.DataSheet4U.com FDME1023PZT Dual P-Channel PowerTrench®MOSFET December 2009 FDME1023PZT Dual P-Channel PowerTrench® MOSFET -20 V, -2.3 A, 142 m.
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