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FDME1023PZT - Dual P-Channel PowerTrench MOSFET

General Description

This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications.

Key Features

  • Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A.
  • Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A.
  • Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A.
  • Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A.
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
  • Free from halogenated compounds and antimony oxides.
  • HBM ESD protection level > 1600V (Note3).
  • RoHS Compliant General.

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Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDME1023PZT Dual P-Channel MOSFET ON Semiconductor

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www.DataSheet4U.com FDME1023PZT Dual P-Channel PowerTrench®MOSFET December 2009 FDME1023PZT Dual P-Channel PowerTrench® MOSFET -20 V, -2.3 A, 142 mΩ Features „ Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A „ Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A „ Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A „ Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1600V (Note3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications.