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MOSFET – Dual P-Channel POWERTRENCH)
-20 V, -2.6 A, 142 mW
FDME1023PZT
Description This device is designed specifically as a single package solution
for the battery charges switch in cellular handset and other ultra−portable applications. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses. When connected in the typical common source configuration, bi−directional current flow is possible.
The MicroFET 1.6 y 1.6 Thin package offers exceptional thermal performance for it’s physical size and is well suited to switching and linear mode applications.
Features
• Max RDS(on) = 142 mW at VGS = −4.5 V, ID = −2.3 A • Max RDS(on) = 213 mW at VGS = −2.5 V, ID = −1.8 A • Max RDS(on) = 331 mW at VGS = −1.8 V, ID = −1.
FDME1023PZT Datasheet
