FDME1023PZT Datasheet | Fairchild Semiconductor

.. FDME1023PZT Dual P-Channel PowerTrench®MOSFET December 2009 Dual P-Channel PowerTrench® MOSFET -20 V, -2.3 A, 142 mΩ Features - Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A - Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A - Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A - Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A - Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin - Free from halogenated pounds and antimony oxides - HBM ESD protection level > 1600V (Note3) - RoHS pliant General Description This device is designed specifically as a single package solution for the battery charges switch in cellular handset and...