* Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
* Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
* Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
* Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6
FDME1024NZT Datasheet (419.85 KB)
FDME1024NZT
Fairchild Semiconductor
419.85 KB
Dual n-channel power trench mosfet.
www.DataSheet4U.com FDME1024NZT Dual N-Channel Power Trench® MOSFET December 2009 FDME1024NZT Dual N-Channel Power Trench® MOSFET 20 V, 3.4 A, 66 m.
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