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MOSFET – Dual, N-Channel, POWERTRENCH)
20 V, 3.8 A, 66 mW
FDME1024NZT
Description This Device is Designed Specifically as a Single Package Solution
for Dual Switching Requirement in cellular handset and other Ultra−Portable Applications. It features two independent N−Channel MOSFETs with low on−state resistance for minimum conduction losses.
The MicroFET™ 1.6x1.6 Thin package offers Exceptional Thermal Performance for it’s physical size and is well suited to switching and linear mode applications.
Features
• Max RDS(on) = 66 mW at VGS = 4.5 V, ID = 3.4 A • Max RDS(on) = 86 mW at VGS = 2.5 V, ID = 2.9 A • Max RDS(on) = 113 mW at VGS = 1.8 V, ID = 2.5 A • Max RDS(on) = 160 mW at VGS = 1.5 V, ID = 2.1 A • Low Profile 0.55 mm Maximum − in the New Package
MicroFET 1.6x1.
FDME1024NZT Datasheet
