FDME1024NZT Datasheet Dual N-Channel Power Trench MOSFET

Manufacturer: Fairchild (now onsemi)

FDME1024NZT dual n-channel power trench mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDME1024NZT
Manufacturer	Fairchild (now onsemi)
File Size	419.85 KB
Description	Dual N-Channel Power Trench MOSFET
Download	FDME1024NZT Download (PDF)

General Description

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applications.

Overview

www.DataSheet4U.com FDME1024NZT Dual N-Channel Power Trench® MOSFET December 2009 FDME1024NZT Dual N-Channel Power Trench® MOSFET 20 V, 3.

Key Features

Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A.
Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A.
Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A.
Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A.
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
Free from halogenated compounds and antimony oxides.
HBM ESD protection level > 1600V (Note3).
RoHS Compliant General.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	FDME1024NZT	Dual N-Channel MOSFET	ON Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number	Description
FDME1023PZT	Dual P-Channel PowerTrench MOSFET
FDME1034CZT	Complementary PowerTrench MOSFET
FDME410NZT	N-Channel MOSFET
FDME430NT	N-Channel PowerTrench MOSFET
FDME510PZT	MOSFET
FDME820NZT	MOSFET
FDME905PT	MOSFET
FDME910PZT	MOSFET
FDM2452NZ	Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM3300NZ	N-Channel MOSFET