FDME1024NZT Datasheet | Fairchild Semiconductor

.. FDME1024NZT Dual N-Channel Power Trench® MOSFET December 2009 Dual N-Channel Power Trench® MOSFET 20 V, 3.4 A, 66 mΩ Features - Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A - Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A - Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A - Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A - Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin - Free from halogenated pounds and antimony oxides - HBM ESD protection level > 1600V (Note3) - RoHS pliant General Description This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other...