General Description Q1: N-Channel
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* Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = .

It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The.

Q1: N-Channel
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* Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 .

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