FDME820NZT Datasheet - Fairchild Semiconductor

MOSFET

FDME820NZT Features

* Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A

* Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A

* Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A

* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

* Free from halogenated compounds and antimon

FDME820NZT General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Applications * Li-lon Battery Pack * Baseband Switch * Load Switch * DC-DC Conversion G D.

FDME820NZT Datasheet (256.53 KB)

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FDME820NZT

Manufacturer:

Fairchild Semiconductor

File Size:

256.53 KB

Description:

Mosfet.

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FDME820NZT MOSFET Fairchild Semiconductor

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FDME820NZT Features

FDME820NZT General Description

Datasheet Details

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