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FDME820NZT - N-Channel MOSFET

Description

This Single N

onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFETt leadframe.

Features

  • Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A.
  • Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A.
  • Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A.
  • Low Profile.
  • 0.55 mm maximum.
  • in the New Package MicroFET 1.6x1.6 Thin.
  • HBM ESD Protection Level > 2.5 kV (Note 3).
  • Free from Halogenated Compounds and Antimony Oxides.
  • RoHS Compliant.

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Datasheet preview – FDME820NZT

Datasheet Details

Part number FDME820NZT
Manufacturer onsemi
File Size 298.93 KB
Description N-Channel MOSFET
Datasheet download datasheet FDME820NZT Datasheet
Additional preview pages of the FDME820NZT datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 20 V, 9 A, 18 mohm FDME820NZT General Description This Single N−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFETt leadframe. Features • Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A • Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A • Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A • Low Profile – 0.55 mm maximum – in the New Package MicroFET 1.6x1.6 Thin • HBM ESD Protection Level > 2.
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