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FDME820NZT Datasheet N-Channel MOSFET

Manufacturer: onsemi

General Description

This Single N−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFETt leadframe.

Overview

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 20 V, 9 A, 18 mohm FDME820NZT.

Key Features

  • Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A.
  • Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A.
  • Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A.
  • Low Profile.
  • 0.55 mm maximum.
  • in the New Package MicroFET 1.6x1.6 Thin.
  • HBM ESD Protection Level > 2.5 kV (Note 3).
  • Free from Halogenated Compounds and Antimony Oxides.
  • RoHS Compliant.