Datasheet Summary
FDME820NZT N-Channel PowerTrench® MOSFET
October 2013
N-Channel PowerTrench® MOSFET
20 V, 9 A, 18 mΩ
Features
- Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A
- Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A
- Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A
- Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
- Free from halogenated pounds and antimony oxides
- HBM ESD protection level >2.5 kV (Note3)
- RoHS pliant
General Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.
Applications
- Li-lon Battery Pack
- Baseband...
