FDME820NZT Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Applications Li-lon Battery Pack Baseband Switch Load Switch DC-DC Conversion G D Pin 1 D S DD S D D DD GS BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG...
FDME820NZT Key Features
- Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A
- Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A
- Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A
- Low profile: 0.55 mm maximum in the new package
- Free from halogenated pounds and antimony oxides
- HBM ESD protection level >2.5 kV (Note3)
- RoHS pliant