Datasheet4U Logo Datasheet4U.com

FDME820NZT Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

📥 Download Datasheet

General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.

Applications „ Li-lon Battery Pack „ Baseband Switch „ Load Switch „ DC-DC Conversion G D Pin 1 D S DD S D D DD GS BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continu

Overview

FDME820NZT N-Channel PowerTrench® MOSFET October 2013 FDME820NZT N-Channel PowerTrench® MOSFET 20 V, 9 A, 18.

Key Features

  • Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A.
  • Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A.
  • Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A.
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
  • Free from halogenated compounds and antimony oxides.
  • HBM ESD protection level >2.5 kV (Note3).
  • RoHS Compliant General.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDME820NZT N-Channel MOSFET ON Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDME1023PZT Dual P-Channel PowerTrench MOSFET
FDME1024NZT Dual N-Channel Power Trench MOSFET
FDME1034CZT Complementary PowerTrench MOSFET
FDME410NZT N-Channel MOSFET
FDME430NT N-Channel PowerTrench MOSFET
FDME510PZT MOSFET
FDME905PT MOSFET
FDME910PZT MOSFET
FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM3300NZ N-Channel MOSFET