Datasheet Details
| Part number | FDMQ8403 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 234.49 KB |
| Description | N-Channel PowerTrench MOSFET |
| Download | FDMQ8403 Download (PDF) |
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| Part number | FDMQ8403 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 234.49 KB |
| Description | N-Channel PowerTrench MOSFET |
| Download | FDMQ8403 Download (PDF) |
|
|
|
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD solutions RoHS Compliant This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
Application High-Efficiency Bridge Rectifiers Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 MLP 4.5x5 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 S3 7 S3 8 G3 9 D3/S4 10 D1/D4 11 G4 12 Q3 Q2 Q4 Q1 6 S2 5 S2 4 G2 3 S1/D2 2 D1/D4 1 G1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) Ratings 100 ±20 6 9 3.1 12 17 1.9 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 65 135 °C/W Device Marking FDMQ8403 Device FDMQ8403 Package MLP 4.5x5 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMQ8403 Rev.C2 1 www.fairchildsemi.com FDMQ8403 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 80 V, VGS = 0 V VGS =
FDMQ8403 N-Channel PowerTrench® MOSFET FDMQ8403 July 2012 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 100 V, 6 A, 110.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMQ8403 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
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