Datasheet Details
| Part number | FDMQ86530L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 240.34 KB |
| Description | N-Channel PowerTrench MOSFET |
| Download | FDMQ86530L Download (PDF) |
|
|
| Part number | FDMQ86530L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 240.34 KB |
| Description | N-Channel PowerTrench MOSFET |
| Download | FDMQ86530L Download (PDF) |
|
|
|
Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
Applications RoHS Compliant Active bridge Diode Bridge replacement in 24V & 48V AC systems Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 G1 D1/D4 S1/D2 G2 S2 MLP 4.5x5 S2 Q1 Q4 Q2 Q3 G4 D1/D4 D3/S4 G3 S3 S3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) Ratings 60 ±20 8 8 50 22 1.9 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 65 135 °C/W Device Marking FDMQ86530L Device FDMQ86530L Package MLP 4.5x5 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev.
C1 1 www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 48 V, VGS = 0 V VGS = ±20
FDMQ86530L Quad N-Channel PowerTrench® MOSFET April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 60 V, 8 A, 17.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMQ86530L | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDMQ8203 | Dual N-Channel and Dual P-Channel PowerTrench MOSFET |
| FDMQ8205 | 2 Series of High-Efficiency Bridge Rectifiers |
| FDMQ8205A | High-Efficiency Bridge Rectifiers |
| FDMQ8403 | N-Channel PowerTrench MOSFET |
| FDM2452NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| FDM3300NZ | N-Channel MOSFET |
| FDM3622 | N-Channel PowerTrench MOSFET |
| FDM606P | P-Channel 1.8V Logic Level Power Trench MOSFET |
| FDM6296 | Single N-Channel / Logic-Level / PowerTrench MOSFET |
| FDMA0104 | N-Channel MOSFET |