FDMQ86530L Description
This Quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge.
FDMQ86530L Key Features
- Max RDS(on) = 17.5 mW at VGS = 10 V, ID = 8 A
- Max RDS(on) = 23 mW at VGS = 6 V, ID = 7 A
- Max RDS(on) = 25 mW at VGS = 4.5 V, ID = 6.5 A
- Substantial Efficiency Benefit in PD Solutions
- This Device is Pb-Free, Halide Free, and RoHS pliant