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FDMQ86530L - N-Channel MOSFET

General Description

This Quad MOSFET solution provides ten

power dissipation over diode bridge.

Key Features

  • Max RDS(on) = 17.5 mW at VGS = 10 V, ID = 8 A.
  • Max RDS(on) = 23 mW at VGS = 6 V, ID = 7 A.
  • Max RDS(on) = 25 mW at VGS = 4.5 V, ID = 6.5 A.
  • Substantial Efficiency Benefit in PD Solutions.
  • This Device is Pb.
  • Free, Halide Free, and RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) GreenBridgetSeries of High-Efficiency Bridge Rectifiers 60 V, 8 A, 17.5 mW FDMQ86530L General Description This Quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Features • Max RDS(on) = 17.5 mW at VGS = 10 V, ID = 8 A • Max RDS(on) = 23 mW at VGS = 6 V, ID = 7 A • Max RDS(on) = 25 mW at VGS = 4.5 V, ID = 6.5 A • Substantial Efficiency Benefit in PD Solutions • This Device is Pb−Free, Halide Free, and RoHS Compliant Applications • Active Bridge • Diode Bridge Replacement in 24 V & 48 V AC Systems DATA SHEET www.onsemi.com Top G4 D1/D4 D3/S4 G3 S3 S3 Bottom D1/D4 D3/ S1/ S4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 MLP 4.