FDMQ86530L Description
Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
FDMQ86530L Key Features
- Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A
- Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
- Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A
- Substantial efficiency benefit in PD solutions