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FDMQ86530L - N-Channel PowerTrench MOSFET

General Description

Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipatio

Key Features

  • General.

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FDMQ86530L Quad N-Channel PowerTrench® MOSFET April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 60 V, 8 A, 17.5 mΩ Features General Description „ Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A „ Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Applications „ RoHS Compliant „ Active bridge „ Diode Bridge replacement in 24V & 48V AC systems Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 G1 D1/D4 S1/D2 G2 S2 MLP 4.