FDMQ86530L Datasheet | Fairchild Semiconductor

FDMQ86530L Quad N-Channel Power Trench® MOSFET April 2013 Green Bridge TM Series of High-Efficiency Bridge Rectifiers N-Channel Power Trench® MOSFET 60 V, 8 A, 17.5 mΩ Features General Description - Max r DS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A - Max r DS(on) = 23 mΩ at VGS = 6 V, ID = 7 A - Max r DS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A - Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Applications - Ro HS pliant - Active bridge - Diode Bridge replacement in 24V & 48V AC systems Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 G1 D1/D4 S1/D2 G2 S2 MLP 4.5x5 S2 Q1 Q4 Q2 Q3 G4 D1/D4 D3/S4 G3 S3 S3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS PD TJ,...