FDMS0310S Key Features
- Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A
- Advanced Package and Silicon bination for low rDS(on)
- SyncFETTM Schottky Body Diode
- MSL1 robust package design
| Manufacturer | Part Number | Description |
|---|---|---|
| FDMS0310AS | N-Channel MOSFET |