FDMS0310AS
Description
The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest RDS(on) while maintaining excellent switching performance.
Key Features
- Max RDS(on) = 4.3 mW at VGS = 10 V, ID = 19 A
- Max RDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17 A
- Advanced Package and Silicon bination for Low RDS(on) and High Efficiency
- SyncFET Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS compliant
