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FDMS0310AS - N-Channel MOSFET

General Description

conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance.

Key Features

  • Max RDS(on) = 4.3 mW at VGS = 10 V, ID = 19 A.
  • Max RDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH), SyncFETt 30 V, 22 A, 4.3 mW FDMS0310AS General Description The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Features • Max RDS(on) = 4.3 mW at VGS = 10 V, ID = 19 A • Max RDS(on) = 5.2 mW at VGS = 4.