FDMS0310AS Key Features
- Max RDS(on) = 4.3 mW at VGS = 10 V, ID = 19 A
- Max RDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17 A
- Advanced Package and Silicon bination for Low RDS(on)
- SyncFET Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS pliant
