Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH), SyncFETt
30 V, 22 A, 5.0 mW
General Description The FDMS0312AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Features
- Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 18 A
- Max RDS(on) = 6.2 mW at VGS = 4.5 V, ID = 16 A
- Advanced Package and Silicon bination for Low RDS(on) and High Efficiency
- SyncFET Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb-...
