Datasheet Details
| Part number | FDMS3500 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 313.57 KB |
| Description | MOSFET |
| Download | FDMS3500 Download (PDF) |
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| Part number | FDMS3500 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 313.57 KB |
| Description | MOSFET |
| Download | FDMS3500 Download (PDF) |
|
|
|
Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
100% UIL Tested Application RoHS Compliant DC - DC Conversion Top Bottom Pin 1 S S S G D D D D Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Av
FDMS3500 N-Channel Power Trench® MOSFET October 2014 FDMS3500 N-Channel Power Trench® MOSFET 75V, 49A, 14.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMS3500 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
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