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MOSFET – N-Channel, POWERTRENCH)
75 V, 49 A, 14.5 mW
FDMS3500
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
• Max RDS(on) = 14.5 mW at VGS = 10 V, ID = 11.5 A • Max RDS(on) = 16.3 mW at VGS = 4.5 V, ID = 10 A • Advanced Package and Silicon Combination for Low RDS(on) • MSL1 Robust Package Design • 100% UIL Tested • RoHS Compliant
Applications
• DC−DC Conversion
DATA SHEET www.onsemi.
FDMS3500 Datasheet
