FDMS3572 Datasheet | Fairchild Semiconductor

.. FDMS3572 N-Channel UltraFET Trench® MOSFET November 2006 FDMS3572 N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ Features General Description - Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A - Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A - Typ Qg = 28nC at VGS = 10V - Low Miller Charge - Optimized efficiency at high frequencies - RoHS pliant tm UItraFET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application - DC - DC Conversion Pin 1 5 6 7 8 4 G 3 S...