FDMS3572 datasheet, mosfet equivalent, Fairchild Semiconductor

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FDMS3572 Features and benefits

General Description
* Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A
* Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A
* Typ Qg = 28nC at VGS = 10V
* Low Miller C.

FDMS3572 Application

Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.

FDMS3572 Description

* Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A
* Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A
* Typ Qg = 28nC at VGS = 10V
* Low Miller Charge
* Optimized efficiency at high frequencies
* RoHS Compliant tm UItraFET devices comb.

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