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FDMS3572 - N-Channel MOSFET

Datasheet Summary

Description

efficiency in power conversion applications.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features

  • Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A.
  • Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A.
  • Typ Qg = 28 nC at VGS = 10 V.
  • Low Miller Charge.
  • Optimized Efficiency at High Frequencies.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet preview – FDMS3572

Datasheet Details

Part number FDMS3572
Manufacturer ON Semiconductor
File Size 292.45 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS3572 Datasheet
Additional preview pages of the FDMS3572 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, UltraFET Trench 80 V, 22 A, 16.5 mW FDMS3572 General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A • Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.
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