FDMS3572
FDMS3572 is N-Channel MOSFET manufactured by onsemi.
Description
UItra FET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- Max RDS(on) = 16.5 m W at VGS = 10 V, ID = 8.8 A
- Max RDS(on) = 24 m W at VGS = 6 V, ID = 8.4 A
- Typ Qg = 28 n C at VGS = 10 V
- Low Miller Charge
- Optimized Efficiency at High Frequencies
- Pb- Free, Halide Free and Ro HS pliant
Applications
- DC
- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
±20
Drain Current:
- Continuous (Package limited) TC = 25°C
- Continuous (Silicon limited) TC = 25°C
- Continuous TA = 25°C (Note 1a)
- Pulsed
PD TJ, TSTG
Power Dissipation: TC = 25°C TA = 25°C (Note 1a)
Operating and Storage Junction Temperature Range
W 78 2.5
- 55 to °C +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
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