FDMS3572 Description
Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A Typ Qg = 28nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS pliant tm UItraFET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to...
FDMS3572 Key Features
- Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A
- Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A
- Typ Qg = 28nC at VGS = 10V
- Low Miller Charge
- Optimized efficiency at high frequencies
- RoHS pliant