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FDMS3572 - N-Channel UltraFET Trench MOSFET

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Description

Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A Typ Qg = 28nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant tm UItraFET devices combine characteristics that e

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Datasheet Details

Part number FDMS3572
Manufacturer Fairchild Semiconductor
File Size 554.84 KB
Description N-Channel UltraFET Trench MOSFET
Datasheet download datasheet FDMS3572 Datasheet
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www.DataSheet4U.com FDMS3572 N-Channel UltraFET Trench® MOSFET November 2006 FDMS3572 N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ Features General Description „ Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A „ Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A „ Typ Qg = 28nC at VGS = 10V „ Low Miller Charge „ Optimized efficiency at high frequencies „ RoHS Compliant tm UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
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