FDMS3572 Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A - Max r DS(on) = 24mΩ at VGS = 6V, ID = 8.4A - Typ Qg = 28n C at VGS = 10V - Low Miller Charge - Optimized efficiency at high frequencies - Ro HS pliant tm UItra FET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r DS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application - DC - DC Conversion Pin 1 5 6 7 8 4 G 3 S 2 S 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 80 ±20 22 48 8.8 50 78 2.5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 °C/W Package Marking and Ordering Information Device Marking FDMS3572 Device FDMS3572 Package Power 56 Reel Size 7’’ Tape Width 12mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMS3572 Rev.C .fairchildsemi. FDMS3572 N-Channel Ultra FET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 64V, VGS = 0V VGS = ±20V, VDS = 0V 80 76 1 ±100 V m V/°C µA n A On Characteristics VGS(th) ∆VGS(th) ∆TJ r DS(on) g FS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature...