Download FDMS3602AS Datasheet PDF
Fairchild Semiconductor
FDMS3602AS
FDMS3602AS is MOSFET manufactured by Fairchild Semiconductor.
Features Q1: N-Channel - Max r DS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A - Max r DS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel - Max r DS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A - Max r DS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses - MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing - Ro HS pliant March 2011 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous Sync FET (Q2) have been designed to provide optimal power efficiency. Applications - puting - munications - General Purpose Point of Load - Notebook VCORE Pin...