FDMS3602AS
Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
Key Features
- Q1: N-Channel
- Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
- Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel
- Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A
- Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant March 2011
