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FDMS3604S - MOSFET

FDMS3604S Description

FDMS3604S PowerTrench® Power Stage FDMS3604S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

FDMS3604S Features

* Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A
* Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A
* Low inductance packaging shortens rise/

FDMS3604S Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE G1 D1 D

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