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FDMS3604S - MOSFET

Datasheet Summary

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Features

  • Q1: N-Channel.
  • Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
  • Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
  • Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A.
  • Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • RoHS Compliant General Descr.

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Datasheet Details

Part number FDMS3604S
Manufacturer Fairchild Semiconductor
File Size 523.09 KB
Description MOSFET
Datasheet download datasheet FDMS3604S Datasheet
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Full PDF Text Transcription

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FDMS3604S PowerTrench® Power Stage FDMS3604S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A „ Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
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