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FDMS3606S Datasheet, Fairchild Semiconductor

FDMS3606S Datasheet, Fairchild Semiconductor

FDMS3606S

datasheet Download (Size : 516.21KB)

FDMS3606S Datasheet

FDMS3606S mosfet equivalent, asymmetric dual n-channel mosfet.

FDMS3606S

datasheet Download (Size : 516.21KB)

FDMS3606S Datasheet

Features and benefits

Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.9 mΩ at VGS = 10 V.

Application


* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 Pin 1 G1 D1 D1 D1.

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) h.

Image gallery

FDMS3606S Page 1 FDMS3606S Page 2 FDMS3606S Page 3

TAGS

FDMS3606S
Asymmetric
Dual
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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