Datasheet Details
| Part number | FDMS3606S |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 516.21 KB |
| Description | Asymmetric Dual N-Channel MOSFET |
| Datasheet |
 FDMS3606S Datasheet
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General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
Key Features
- Q1: N-Channel.
- Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
- Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
- Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A.
- Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A.
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
- RoHS Compliant December 2012.
